Electrical Characteristics of Organic Thin-Film Transistors with Polystyrene/Sol-Gel Derived Titania Composite Insulator
Electrical Characteristics of Organic Thin-Film Transistors with Polystyrene/Sol-Gel Derived Titania Composite Insulator
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聚苯乙烯/溶胶凝胶二氧化钛复合绝缘体有机薄膜晶体管的电特性
DOI：
10.1080/15421401003598009
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发表时间：
2010
影响因子：
0.7
通讯作者：
J. Choi
中科院分区：
文献类型：
--
作者：
Jaehoon Park;S. Lee;B. J. Park;H. Choi;Dong Wook Kim;Jong Won Lee;J. Choi
本研究采用溶胶-凝胶法，以四异丙醇钛为前驱体，制备了聚苯乙烯/二氧化钛复合膜。以该复合薄膜作为栅绝缘层的并五苯有机薄膜晶体管(OTFT)在低于−4V的低电压下工作，具有较高的性能，如阈值电压为−0.9V，亚阈值斜率为0.2V/ten，迁移率为4.7cm2/vs，这主要归功于所制备的复合绝缘体具有较高的介电性能。这些结果表明，溶胶-凝胶法合成的复合绝缘子在低电压、高性能OTFT中具有广阔的应用前景。
In this study, a sol-gel process is introduced to fabricate the composite film of polystyrene and titania, using titanium tetraisoproxide as a titania precursor. Pentacene-based organic thin-film transistor (OTFTs) with the composite film as a gate insulator operates at a low voltage below −4 V and exhibits high performances, such as threshold voltage of −0.9 V, subthreshold slope of 0.2 V/decade, and mobility of 4.7 cm2/Vs, which are mainly attributed to a high dielectric property of the fabricated composite insulator. These results demonstrate that sol-gel derived composite insulators are essentially promising for low-voltage OTFTs with high performances.