Electrophysiological correlates for response inhibition in a Go/NoGo task
Electrophysiological correlates for response inhibition in a Go/NoGo task
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DOI：
10.1016/s1388-2457(01)00691-5
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发表时间：
2001-12-01
影响因子：
4.7
通讯作者：
Kobayashi, S
中科院分区：
文献类型：
--
作者：
Bokura, H;Yamaguchi, S;Kobayashi, S
目的：研究Go/NoGo任务时的事件相关脑电位（event - correlation brain potential, ERPs），以阐明反应的执行和抑制控制的电生理基础。方法：采用高密度脑电图（EEG）记录13名健康受试者在改进的连续性能测试中Go/NoGo erp。我们测量了峰值延迟。振幅。并利用低分辨率电磁断层成像技术对神经源进行了分析。结果：Go和NoGo在潜伏期、振幅、头皮地形、P1和N1分量的电定位上无差异，N2分量仅在NoGo ERP中可见，其来源位于右侧眶额皮层和扣带皮层。与Go-P3相比，NoGo-P3的振幅更大，潜伏期更长，且更局限于前部。Go-P3主要位于顶叶皮层内侧，而NoGo-P3的活动位于左侧眶额皮层外侧。结论：这些结果表明眶额外侧区和前扣带区在行为的抑制性控制中起关键作用，两个半球都参与抑制性认知功能。(C) 2001爱思唯尔科学爱尔兰有限公司版权所有。
Objective: Event-related brain potentials (ERPs) during a Go/NoGo task were investigated to elucidate the electrophysiological basis for executive and inhibitory control of responses.Methods: We studied Go/NoGo ERPs in 13 healthy subjects during a modified continuous performance test using high-density electroencephalogram (EEG) recording. We measured peak latency. amplitude. and topographic distribution of the components, and analyzed the neural sources using low-resolution electromagnetic tomography.Results: There were no differences between the Go and NoGo conditions in the latency, amplitude, scalp topography, or the electrical localization of the P1 and N1 components, The N2 component was seen only in the NoGo ERP, and its source was located in the right lateral orbitofrontal and cingulate cortex. The NoGo-P3 component had larger amplitude and longer latency, and was more anteriorly localized than Go-P3 Go-P3 was located mainly in the medial part of the parietal cortex, whereas the NoGo-P3 activity was observed in the left lateral orbitofrontal cortex.Conclusions: These results suggest that the lateral orbitofrontal and anterior cingulate area,, play critical roles in the inhibitory control of behavior and that both hemispheres are involved in inhibitory cognitive function. (C) 2001 Elsevier Science Ireland Ltd. All rights reserved.