Polarity effect of electromigration in Ni2Si contacts on Si
Polarity effect of electromigration in Ni2Si contacts on Si
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DOI：
10.1103/physrevlett.76.2346
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发表时间：
1996-03-25
影响因子：
8.6
通讯作者：
Tu, KN
中科院分区：
文献类型：
--
作者：
Huang, JS;Liou, HK;Tu, KN
浅结器件中接触的电迁移是未来超大规模集成技术的可靠性问题。硅化物接触对高电流密度的稳定性是未知的。在Ni/Ni_2Si/n（+）-Si和Ni/Ni_2Si/p（+）-Si接触对上，我们观察到了电迁移引起失效的强极性效应。他们被发现失败优先在阴极。还研究了未反应的Ni/n（+）-Si和Ni/p（+）-Si接触对。后者在阴极失效，而前者在阳极失效。失效机制提出了解释极性效应。
The electromigration of contacts in shallow junction devices is a reliability issue for the future very large scale integration technology. The stability of silicide contacts against a high current density is unknown. We have observed a strong polarity effect of the electromigration-induced failure at both Ni/Ni2Si/n(+)-Si and Ni/Ni2Si/p(+)-Si contact pairs. They were found to fail preferentially at the cathode. The unreacted Ni/n(+)-Si and Ni/p(+)-Si contact pairs have also been studied. The latter fails at the cathode while the former fails at the anode. Failure mechanisms are proposed to explain the polarity effects.