Graphene segregated on Ni surfaces and transferred to insulators
Graphene segregated on Ni surfaces and transferred to insulators
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DOI：
10.1063/1.2982585
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发表时间：
2008-09-15
影响因子：
4
通讯作者：
Pei, Shin-Shem
中科院分区：
文献类型：
--
作者：
Yu, Qingkai;Lian, Jie;Pei, Shin-Shem
我们报道了一种通过表面分离和衬底转移合成高质量石墨烯的方法。通过在高温下将碳溶解在Ni中，然后以不同的速率冷却，在环境压力下使石墨烯与Ni表面分离。不同的冷却速率导致不同的偏析行为，强烈影响石墨烯薄膜的厚度和质量。电子显微镜和拉曼光谱表明，用中等冷却速率合成的石墨烯薄膜具有高质量的晶体结构和良好控制的厚度。石墨烯膜转移到绝缘基板通过湿法蚀刻，并发现保持其高品质。(C)2008年美国物理学会。
We report an approach to synthesize high quality graphene by surface segregation and substrate transfer. Graphene was segregated from Ni surface under the ambient pressure by dissolving carbon in Ni at high temperatures followed by cooling down with various rates. Different cooling rates led to different segregation behaviors, strongly affecting the thickness and quality of the graphene films. Electron microscopy and Raman spectroscopy indicated that the graphene films synthesized with medium cooling rates have high quality crystalline structure and well-controlled thicknesses. The graphene films were transferred to insulating substrates by wet etching and found to maintain their high quality. (C) 2008 American Institute of Physics.