Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes)
Fabrication of ZnS/SiC nanocables, SiC-shelled ZnS nanoribbons (and sheets), and SiC nanotubes (and tubes)
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DOI：
10.1063/1.1801168
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发表时间：
2004-10-04
影响因子：
4
通讯作者：
Golberg, D
中科院分区：
文献类型：
--
作者：
Hu, JQ;Bando, Y;Golberg, D
本文报道了以硫化锌纳米线、纳米带和片材为模板，通过可控的两步热过程合成了硫化锌/碳化硅纳米线、碳化硅纳米管和其他相关结构。在电缆中，硫化锌的芯是多型的fcc-和hcp-znS，直径类似于50-130 nm，而碳化硅外壳是多晶的β-碳化硅，厚度类似于15-50 nm。通过简单地从电缆线上去掉硫化锌核心，形成了碳化硅纳米管。碳化硅纳米管的室温光致发光显示出一个中心位于517 nm附近的强绿色发射带。这里描述的纳米结构在先进半导体器件块中可能是有价值的。(C)2004年美国物理研究所。
Here we report on the synthesis of ZnS/SiC nanocables and SiC nanotubes and other relevant structures via a controllable two-stage thermal process using ZnS nanowires, nanoribbons, and sheets as templates. Within the cables, the ZnS cores are polytypes of fcc- and hcp-ZnS with similar to50-130 nm diameter, and the SiC shells are polycrystalline beta-SiC with similar to15-50 nm thickness. SiC nanotubes were formed through simple removal of ZnS cores from the cables. Room-temperature photoluminescence of the SiC nanotubes displays a strong green emission band centered at similar to517 nm. The nanostructures described herewith may be valuable in the blocks of advanced semiconducting devices. (C) 2004 American Institute of Physics.