Morphological transformation of a crystal–melt interface during unidirectional growth of silicon
Morphological transformation of a crystal–melt interface during unidirectional growth of silicon
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DOI：
10.1016/j.actamat.2011.04.016
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发表时间：
2011-06
期刊：
影响因子：
9.4
通讯作者：
K. Fujiwara;Raira Gotoh;Xinbo Yang;H. Koizumi;J. Nozawa;S. Uda
中科院分区：
文献类型：
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作者：
K. Fujiwara;Raira Gotoh;Xinbo Yang;H. Koizumi;J. Nozawa;S. Uda
通过原位观察研究了单向生长过程中Si（110）、（112）和（111）晶液界面的形态转变。直接观察到，在高生长速度下，Si（110）和（112）晶体-熔体界面的形态从平面小平面转变为锯齿形小平面，尽管在Si（111）界面处没有观察到这种形态转变。结果表明，当在平面界面上引入波动扰动时，会形成锯齿形的刻面界面，并且扰动被放大。Si（110）和（112）界面的这种锯齿形刻面形成行为与Si（100）界面的类似。它的结论是，这种锯齿形刻面界面的形成是普遍的，在晶体-熔体界面的粗糙平面的Si，和晶体-熔体界面处的负温度梯度所需的形态从平面到锯齿形刻面的转变。
We investigated the morphological transformation at Si (1 1 0), (1 1 2) and (1 1 1) crystal–melt interfaces during unidirectional growth by in situ observation. It was directly observed that the morphology of the Si (1 1 0) and (1 1 2) crystal–melt interfaces was transformed from planar to zigzag facets at high growth velocities, although no such morphological transformation was observed at Si (1 1 1) interfaces. It was shown that a zigzag faceted interface was formed when a wavy perturbation was introduced into the planar interface, and that the perturbation was amplified. This zigzag facet formation behavior of the Si (1 1 0) and (1 1 2) interfaces is similar to that of the Si (1 0 0) interface. It is concluded that this formation of a zigzag faceted interface is universal at the crystal–melt interface of rough planes of Si, and that a negative temperature gradient at the crystal–melt interface is required for morphological transformation from planar to zigzag facets.