In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors
In-Pixel Source Follower Transistor RTS Noise Behavior Under Ionizing Radiation in CMOS Image Sensors
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DOI：
10.1109/ted.2012.2189115
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发表时间：
2012-06-01
影响因子：
3.1
通讯作者：
Magnan, Pierre
中科院分区：
文献类型：
--
作者：
Martin-Gonthier, Philippe;Goiffon, Vincent;Magnan, Pierre
本文介绍了采用 0.18-μm CMOS 图像传感器工艺设计的图像传感器的几个总电离剂量 (TID) 步长高达 2.19 Mrad 的时间噪声测量结果。噪声测量重点关注随机电报信号 (RTS) 噪声，这是由于传感器读出链的像素内源极跟随器晶体管会产生噪声像素。结果显示，RTS 噪声在 TID 高达 300 krad 时没有显着下降。除了这个 TID 步骤之外，还观察到有限的 RTS 噪声衰减，并且对于 2.19-Mrad 步骤，注意到总噪声（包括热噪声、1/f 噪声和 RTS 噪声）的额外增加。对高 TID 的噪声像素进行了研究，观察到三种情况：1）RTS 行为没有变化； 2）创建RTS行为； 3) RTS 行为的修改。
This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-mu m CMOS image sensor process. The noise measurements are focused on the random telegraph signal (RTS) noise due to the in-pixel source follower transistor of the sensor readout chain inducing noisy pixels. Results show no significant RTS noise degradation up to 300 krad of TID. Beyond this TID step, a limited RTS noise degradation is observed, and for the 2.19-Mrad step, an additional increase of total noise, including thermal, 1/f, and RTS noises, is noted. Noisy pixels have been studied for high TIDs, and three cases have been observed: 1) no change on RTS behavior; 2) creation of RTS behavior; and 3) modifications of RTS behavior.