Direct observation of basal dislocation in sapphire by HRTEM

Direct observation of basal dislocation in sapphire by HRTEM
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HRTEM 直接观察蓝宝石基底位错

DOI:
10.1016/s1359-6454(01)00318-4
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发表时间:
2002
期刊:
影响因子:
9.4
通讯作者:
Y. Ikuhara
Y. Ikuhara
中科院分区:
材料科学1区
文献类型:
--
作者:
A. Nakamura;Takahisa Yamamoto;Y. Ikuhara

文献摘要

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在1400°C下压缩蓝宝石以激活基底滑移,并且通过HRTEM从平行于位错线的方向直接观察引入的基底位错的核心结构。证实了基底位错通过自攀机制分解为两个半部分位错。这两个分波沿着[0001]方向分离一定距离,该方向垂直于滑移面。另一方面,发现在基底位错中不存在滑移分离。这一结果表明,基底位错的滑移运动停止后,位错核部的滑移解离转变为攀移解离。
Sapphire was compressed at 1400°C to activate basal slip, and the core structure of introduced basal dislocations was directly observed by HRTEM from a direction parallel to the dislocation line. It was confirmed that the basal dislocation dissociates into two half partial dislocations by the self-climb mechanism as suggested in a previous report. The two partials separated with a certain distance along the [0001] direction, which is normal to the glide plane. On the other hand, it was found that glide dissociation is not developed in the basal dislocation. This result implies that after the glide motion of the basal dislocation had stopped, glide dissociation makes a change to climb dissociation in the core of the dislocation.