Radiation-induced soft errors in digital circuits - A literature survey
Radiation-induced soft errors in digital circuits - A literature survey
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数字电路中辐射引起的软错误 - 文献调查
DOI:
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发表时间:
2002
期刊:
影响因子:
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通讯作者:
T. Heijmen
中科院分区:
文献类型:
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作者:
T. Heijmen
The current technical note gives an overview of the available literature on the soft error rate (SER) of semiconductor devices at sea level. The main focus is on SRAM circuits, but other memories and logic are considered also. The radiation sources causing ionizing particles in semiconductors are discussed and the physical mechanisms of the upset of data bits are treated. Reported work on soft error modeling and simulation is reviewed and test methods are summarized. The impact of technology scaling on SER is discussed. Several techniques are treated that were proposed to improve the SER sensitivity of circuit designs. The report includes a discussion about the impact of the SER issue on deep-submicron design in coming years. Conclusions: The soft error issue is increasingly important in deep-submicron design. Nowadays, the topic is particularly relevant for memories, but in the near future it will also have to be addressed in logic design. The radiation sources inducing soft errors are alpha particles (from wafer and package materials) and cosmic neutrons. The two types of particles require their own measurement techniques. Different modeling and simulation methods have been developed at both the device and the circuit level. Several solutions have been proposed to improve the SER sensitivity of devices. Eventually, the application of error detection and correction methodologies will be necessary to obtain sufficient reliability. Technology scaling increases both the total SER and the percentage of multiple-bit errors. c ©Philips Electronics Nederland BV 2002 iii 2002/828 Unclassified Report iv c ©Philips Electronics Nederland BV 2002 Unclassified Report 2002/828