Validity of the effective injection barrier in organic field-effect transistors
Validity of the effective injection barrier in organic field-effect transistors
复制标题
有机场效应晶体管有效注入势垒的有效性
DOI：
10.1088/1361-6463/abcbbf
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发表时间：
2020
期刊：
影响因子：
--
通讯作者：
Y. Bonnassieux
中科院分区：
文献类型：
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作者：
Yongjeong Lee;G. Horowitz;Sungyeop Jung;Y. Bonnassieux
注入势垒是控制有机场效应晶体管（OFFET）中电荷和电流密度的关键参数。然而，有机无序半导体（ODS）的能量无序阻碍了注入势垒的明确定义。本文采用系统的数值模拟方法研究了金属/有机无序半导体中有效注入势垒的有效性。将数值模拟和解析模型的接触电阻进行了比较，验证了该方法的有效性。通过改变高斯宽度，有效注入势垒被验证为低程度的无序，在半导体是在非简并条件下。费米能级相对于高斯宽度的位置区分了ODS的非简并和简并条件，清楚地表明了有效注入势垒的有效范围。
The injection barrier is a key parameter that governs the charge and current density in organic field-effect transistors (OFETs). However, the energetic disorder of organic disordered semiconductors (ODSs) hinders a clear definition of the injection barrier. We study the validity of effective injection barrier at the metal/organic disordered semiconductor by means of systematic numerical simulation of OFETs in full consideration of the Gaussian density-of-states. The contact resistance from the numerical simulation and analytical model are compared to verify this procedure. By varying the Gaussian width, the effective injection barrier is validated for low degree of disorder at which the semiconductor is under non-degenerate condition. The position of Fermi level with respect to the Gaussian width distinguishes the non-degenerate and degenerate condition of ODSs, indicating clearly the range of validity of the effective injection barrier.