A Highly Robust and Low-Power Real-Time Double Node Upset Self-Healing Latch for Radiation-Prone Applications
A Highly Robust and Low-Power Real-Time Double Node Upset Self-Healing Latch for Radiation-Prone Applications
复制标题
适用于易辐射应用的高度稳健且低功耗的实时双节点翻转自愈锁存器
DOI：
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发表时间：
2021
影响因子：
2.8
通讯作者：
Atin Mukherjee
中科院分区：
文献类型：
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作者：
Sandeep Kumar;Atin Mukherjee
本文提出了一种单粒子双节点翻转（SEDNU）自愈（DNUSH）锁存器，以满足恶劣辐射环境下应用的高鲁棒性要求。DNUSH锁存器基于双模块冗余，主要采用C元件和逆变器，形成多反馈互锁回路，即使在辐射事件发生后也能保持正确的数据。使用Synopsys HSPICE的故障注入仿真成功地表明了所提出的锁存器的自愈能力。仿真结果表明，所提出的锁存器可以自愈从所有SEDNU，消耗低功耗，即使在高速操作，并具有最小的功率延迟面积积（PDAP）相比，现有的SEDNU弹性锁存器。与现有的SEDNU弹性锁存器相比，所提出的锁存器的速度平均提高了51.25%，功耗节省了22.67%，PDAP降低了59.74%。此外，对工艺，电压和温度（PVT）变化的建议锁存器的灵敏度评估被发现是低或相当于参考锁存器。
This work presents a single event double node upset (SEDNU) self-healing (DNUSH) latch to meet the high-robustness requirement of the applications used in a harsh radiation environment. The DNUSH latch is based on dual modular redundancy and mainly employs C-elements and inverters, forming multi-feedback interlocked loops to retain the correct data even after the radiation event. The self-healing capability of the proposed latch is successfully shown by the fault injection simulation using Synopsys HSPICE. Simulation results show that the proposed latch can self-heal from all SEDNUs, consumes low power even for high-speed operations, and has the least power-delay-area product (PDAP) compared to the existing SEDNU resilient latches. The proposed latch offers on average 51.25% improvement in speed, 22.67% saving in power consumption, and 59.74% lower PDAP compared to the existing SEDNU resilient latches. In addition, the sensitivity assessment of the proposed latch against the process, voltage, and temperature (PVT) variations are found to be either low or equivalent to the reference latches.