High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In 0.5Ga 0.5P
High-Performance Au/Ti/Ge/Pd Ohmic Contacts on n-Type In 0.5Ga 0.5P
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n 型 In 0.5Ga 0.5P 上的高性能 Au/Ti/Ge/Pd 欧姆接触
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Huang
中科院分区：
文献类型：
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作者：
Chun;Janne;Jan;Jung;Yong;S. Chan;Chun;Y. Chan;Huang
首次在n+-In0.5Ga0.5P上制造出高性能Au/Ti/Ge/Pd欧姆接触。采用低压有机金属化学气相沉积（LP-MOCVD）法生长的n+-In0.5Ga0.5P外延层，Si掺杂浓度约为2×1018 cm-3，经400℃、60 s快速热退火后，接触电阻率最小低至1.2×10-5 Ω·cm2，远低于AuGeNi接触电阻率。由于Ti势垒层的引入，Au/Ti/Ge/Pd体系的热稳定性明显高于传统AuGeNi。高温退火后的样品表面观察到许多孔洞和岛状物。 P从分解的In0.5Ga0.5P基体中向外扩散以及Pd和Ge的团聚是接触退化的主要原因。
High-performance Au/Ti/Ge/Pd ohmic contacts on n+-In0.5Ga0.5P have been fabricated for the first time. Using an n+-In0.5Ga0.5P epitaxial layer grown by low pressure metalorganic chemical vapor deposition (LP-MOCVD) with a Si dopant concentration of about 2×1018 cm-3, the minimum specific contact resistivity is as low as 1.2×10-5 Ω·cm2, which is much lower than that of AuGeNi contacts after rapid thermal annealing at 400°C for 60 s. The thermal stability of the Au/Ti/Ge/Pd system is significantly higher than that of conventional AuGeNi due to the introduction of the Ti barrier layer. Many holes and islands are observed on the surfaces of samples annealed at high temperature. The outdiffusion of P from the decomposed In0.5Ga0.5P substrate and agglomeration of Pd and Ge are the primary causes of contact degradation.