Effects of Various Oxidizers on the ZrO2 Thin Films Deposited by Atomic Layer Deposition
Effects of Various Oxidizers on the ZrO2 Thin Films Deposited by Atomic Layer Deposition
复制标题
不同氧化剂对原子层沉积ZrO2薄膜的影响
DOI：
10.1080/10584580490898425
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发表时间：
2004
影响因子：
0.7
通讯作者：
Jiyoung Kim
中科院分区：
文献类型：
--
作者：
D. Jeong;Jinwoo Lee;Jiyoung Kim
在这项研究中，我们研究了O2和N2O作为氧化锆叔丁醇原子层沉积（ALD）的氧化剂，与常规反应物H2O相比，对ZrO2特性的影响。我们观察到沉积温度低于250℃为ALD反应区，高于300℃为CVD反应区。H2O作为氧化剂使单斜相完全结晶，而N2O和O2使非晶相完全结晶。使用H2O的ZrO2薄膜的泄漏电流明显高于使用N2O和O2的薄膜。与传统的H2O相比，O2和N2O适合作为ALD的反应物，使用zr -t- buoxide替代栅极介质应用。通过改变氧化剂，制备出容量大、漏电流小的氧化锆薄膜。
In this study, we investigated the effect of O2 and N2O as an oxidizer of atomic layer deposition (ALD) using Zr tert-butoxide on the characteristics of ZrO2 compared to a conventional reactant, H2O. We observe that deposition temperature lower than 250°C is ALD reaction regime while the temperature higher than 300°C is CVD reaction region. H2O as an oxidant causes fully crystallization to monoclinic phase, while N2O and O2 results in amorphous phase. Leakage current of ZrO2 films using H2O shows much higher than those of the films using N2O and O2. Compared to conventional H2O, O2 and N2O are suitable for reactant of ALD using Zr-t-butoxide for alternative gate dielectric applications. Through the variation of oxidizers, zirconia thin films which have higher capacity and lower leakage current are fabricated.