Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk
Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk
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DOI：
10.1063/1.4961948
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发表时间：
2016-08
期刊：
影响因子：
1.6
通讯作者：
Hao Wu;L. Ji;R. Harasawa;Yuya Yasue;T. Aritake;C. Jiang;Shulong Lu;A. Tackeuchi
中科院分区：
文献类型：
--
作者：
Hao Wu;L. Ji;R. Harasawa;Yuya Yasue;T. Aritake;C. Jiang;Shulong Lu;A. Tackeuchi
The effect of thermal annealing on the electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk was investigated by time-resolved spin-dependent pump and probe reflection measurement with a high time resolution of 200 fs. Three similar InGaAsP samples were examined one of which was annealed at 800 °C for 1 s, one was annealed at 700 °C for 1 s and the other was not annealed after crystal growth by molecular beam epitaxy. Although the carrier lifetimes of the 700 °C-annealed sample and the unannealed sample were similar, that of the 800 °C-annealed sample was extended to 11.6 (10.4) ns at 10 (300) K, which was more than two (four) times those of the other samples. However, interestingly the spin relaxation time of the 800 °C-annealed sample was found to be similar to those of the other two samples. Particularly at room temperature, the spin relaxation times are 143 ps, 147 ps, and 111 ps for the 800 °C-annealed sample, 700 °C-annealed sample, and the unannealed sample, respectively.
