Field emission performance of SiC nanowires directly grown on graphite substrate
Field emission performance of SiC nanowires directly grown on graphite substrate
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石墨衬底上直接生长SiC纳米线的场发射性能
DOI：
10.1016/j.matchemphys.2010.12.066
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发表时间：
2011-04-15
影响因子：
4.6
通讯作者：
Tang, Weihua
中科院分区：
文献类型：
--
作者：
Chen, Jianjun;Shi, Qiang;Tang, Weihua
采用高温热蒸发的方法，在石墨衬底上成功地合成了草坪状碳化硅纳米线阵列。采用扫描电子显微镜（SEM）、x射线衍射仪（XRD）和透射电子显微镜（TEM）对纳米线的形貌、微观结构和组成进行了表征。在石墨衬底上生长的产品是具有高宽高比的六边形棱柱形单晶3C-SiC纳米线。在SiC纳米线中发现了微孪晶和层错等平面缺陷。在石墨衬底上生长的SiC纳米线具有2.1 V μ m（-1）的极低场阈值、高亮度和稳定的场发射性能。(C) 2011 Elsevier B.V.版权所有
Lawn-like SiC nanowire arrays were successfully synthesized on graphite substrates by thermal evaporation of silicon powders at high temperature. The morphology, microstructure and composition of the nanowires were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements. The product grown on graphite substrates was hexagonal prism-shaped single-crystal 3C-SiC nanowires with high aspect ratio. Planar defects, such as microtwins and stacking faults were observed in SiC nanowires. Field emission measurements of the SiC nanowires grown on graphite substrate showed a very low threshold field of 2.1 V mu m(-1), high brightness and stable field emission performance. (C) 2011 Elsevier B.V. All rights reserved.