Demonstration of a Tunable RF MEMS Bandpass Filter Using Silicon Foundry Process
Demonstration of a Tunable RF MEMS Bandpass Filter Using Silicon Foundry Process
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使用硅铸造工艺演示可调谐 RF MEMS 带通滤波器
DOI：
10.1163/156939309787604355
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发表时间：
2009
影响因子：
1.3
通讯作者：
D. Uttamchandani
中科院分区：
文献类型：
--
作者：
Lijie Li;D. Uttamchandani
报道了一种基于低阻硅衬底的新型可调谐微波滤波器，调谐范围为13.8 ~ 18.2GHz。该滤波器是通过将两个梳状电容与一个直线电感集成而实现的。通过改变双压电晶片MEMS驱动器的电容值，实现了调谐效果。整个结构尺寸为1.5 mm × 3.3 mm，允许27.5%的连续调谐，插入损耗范围为3.4 - 6 dB。驱动电压范围为0 V至0.36 V。
A novel tunable microwave filter with tuning range of 13.8 GHz to 18.2 GHz fabricated using a standard silicon foundry process based on lowresistivity silicon substrate is reported. The filter effect has been realized by integrating two interdigitated comb capacitors with a straight line inductor. The tuning effect has been achieved by varying the capacitance value of the capacitors with a bimorph MEMS actuator. The structure in whole, measuring 1.5 mm × 3.3 mm, allows 27.5% continuous tuning and insertion loss ranging from 3.4 to 6 dB. The driving voltage ranges from 0 V to 0.36 V.