Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC
Effect of oxygen partial pressure on the high-temperature oxidation of CVD SiC
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DOI：
10.1016/s0010-938x(01)00066-x
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发表时间：
2002-02
影响因子：
8.3
通讯作者：
T. Goto;Hisashi Homma;T. Hirai
中科院分区：
文献类型：
--
作者：
T. Goto;Hisashi Homma;T. Hirai
研究了化学气相沉积碳化硅（CVD SiC）在1670-2010 K温度范围内，在O2-Ar和CO2-Ar气氛中的氧化行为。O_2-Ar体系的氧化动力学为抛物线或线性抛物线，CO_2-Ar体系为抛物线。在O_2-Ar体系中，抛物线速率常数kp的活化能为210-220 kJ/mol，在CO_2-Ar体系中为290-300 kJ/mol。在O_2-Ar和CO_2-Ar中，kp与氧分压（PO_2）的关系式为kp <$（PO_2）_n，其中n分别为0.08-0.13和0.37-0.53。气泡的形成温度高于1985 K，氧分压大于5 kPa。当PO 2 <5 kPa时，气泡形成温度随PO 2的降低而降低。
The oxidation behavior of chemically vapor-deposited silicon carbide (CVD SiC) was studied at 1670–2010 K in O2–Ar and CO2–Ar. The oxidation kinetics in O2–Ar was parabolic or linear parabolic, and was parabolic in CO2–Ar. The activation energy for the parabolic rate constants (kp) was 210–220 kJ/mol in O2–Ar, and was 290–300 kJ/mol in CO2–Ar. The oxygen partial pressure (PO2) dependence of kpwas expressed as kp∝ (PO2)n, where n=0.08–0.13 and 0.37–0.53 in O2–Ar and CO2–Ar, respectively. Bubbles were formed at more than 1985 K and PO2>5 kPa. The bubble formation temperature decreased with decreasing PO2at PO2<5 kPa.