Electrical Properties and Structure of Sn+ Ion Implantation Polycrystalline Lead Telluride
Electrical Properties and Structure of Sn+ Ion Implantation Polycrystalline Lead Telluride
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DOI：
10.4028/www.scientific.net/msf.308-311.717
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发表时间：
1999-05
期刊：
影响因子：
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通讯作者：
L. Zhang;Q. Shen;Gang Wang;Leng Chen;R. Tu;Toshio Hirari
中科院分区：
文献类型：
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作者：
L. Zhang;Q. Shen;Gang Wang;Leng Chen;R. Tu;Toshio Hirari
Polycrystalline PbTe samples have been implanted by Sn + ion at 200KeV with doses of 6×10 16 and 1×10 17 ions/cm 2 in order to create a modified Pb 1-x Sn x Te layers with gradation of carrier concentration. The electrical conductivity, Hall coefficient and thermoelectric power measurements have been carried out at 300K on the implanted samples. The effect of Sn + ion implantation on structure of PbTe has been investigated using X-ray Diffraction (XRD). Scanning Electron Microscope (SEM) and X-ray Photoelectron Spectroscopy (XPS). The results indicate the possible presence of Pb 1-x Sn x Te (x=0.2∼0.25) phase during the ion-implantation processes.
