Electron-impact-induced anisotropic etching of silicon by hydrogen
Electron-impact-induced anisotropic etching of silicon by hydrogen
复制标题
氢对硅的电子轰击诱导各向异性蚀刻
DOI：
10.1007/bf00566522
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发表时间：
1982
影响因子：
3.6
通讯作者：
F. Sarott
中科院分区：
文献类型：
--
作者：
S. Vepřek;F. Sarott
电子轰击能显著提高硅在氢低压放电等离子体中的刻蚀速率，目前可达1000 μ m/min，刻蚀速率随电子电流密度和氢气压的增加而线性增加（范围：0.05-0.7 mbar），并随温度升高而降低，在1080至300°C的温度范围内产生−4.2千卡/摩尔的活化能。蚀刻保持各向异性在整个压力范围内研究。
The etch rate of silicon in a hydrogen low-pressure discharge plasma can be strongly enhanced by electron bombardment, reaching presently up to ∼1000 Å/min. The etch rate increases linearly with increasing electron current density and hydrogen pressure (range ∼0.05–0.7 mbar) and decreases with increasing temperature, yielding an activation energy of −4.2 kcal/mole in a temperature range of ∼80 to 300°C. The etching remains anisotropic within the whole pressure range studied.