EFFICIENT LIGHT-SCATTERING MODELING FOR ALIGNMENT, METROLOGY, AND RESIST EXPOSURE IN PHOTOLITHOGRAPHY
EFFICIENT LIGHT-SCATTERING MODELING FOR ALIGNMENT, METROLOGY, AND RESIST EXPOSURE IN PHOTOLITHOGRAPHY
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DOI：
10.1109/16.141223
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发表时间：
1992-07-01
影响因子：
3.1
通讯作者：
YUAN, CM
中科院分区：
文献类型：
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作者：
YUAN, CM
在以前的工作中，二维波导模型已被开发和广泛的研究，使严格的光散射计算光刻相关的过程，如步进对齐，线宽和重叠测量，抗蚀剂漂白可以执行。 然而，如果所涉及的晶片形貌复杂或者如果涉及抗蚀剂漂白问题，则计算是昂贵的。 在本文中，数值技术已被开发和实施，使CPU的使用率大幅降低了约一个数量级。 这些数值技术使波导模型更实用。 通常，对于每个偏振状态，模拟静态情况（例如，线宽测量），并预计为7至70分钟以模拟动态情况（例如，在13个非相干照明点源和10个曝光步骤下抗漂白）。
In the previous work, the two-dimensional wave-guide model has been developed and examined extensively so that rigorous light scattering calculations for photolithography-related processes such as stepper alignment, linewidth and overlay measurements, and resist bleaching can be performed. The computation, however, is expensive if the wafer topography involved is complicated or if resist bleaching problems are involved. In this paper, numerical techniques have been developed and implemented so that the CPU usage is drastically reduced by approximately an order of magnitude. These numerical techniques make the waveguide model more practical to use. Typically, for each polarization state, it takes 10 to 200 s to simulate a static case (e.g., linewidth measurement), and is projected to be 7 to 70 min to simulate a dynamic case (e.g., resist bleaching under 13 incoherent illumination point sources and ten exposure steps), on a high-speed workstation such as an IBM RISC/6000 Model 530.