Strain maps on statically bend (001) silicon microbeams using AFM-integrated Raman spectroscopy
Strain maps on statically bend (001) silicon microbeams using AFM-integrated Raman spectroscopy
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DOI：
10.1007/s00419-014-0953-8
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发表时间：
2015-03
影响因子：
2.8
通讯作者：
C. Liebold;W. Müller
中科院分区：
文献类型：
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作者：
C. Liebold;W. Müller
微米级的材料表征在设计阶段和估计微/纳机电系统(MEMS/NEMS)的可靠性方面具有重要意义。我们提出了一种用于提取材料性质信息的耦合技术，该技术基于对硅梁施加的定义力，并结合使用集成在拉曼光谱仪中的原子力显微镜来映射所产生的应变。将实验数据与弹性理论的分析预测进行了比较。这项技术将是有用的，例如，用于识别微机械加工设备中的应力集中。该实验基于[001]平行加载微悬臂梁(001)硅表面背向散射结构的双向偏振微拉曼衍射。考虑了激光对硅的穿透深度和光机结构的漂移，建立了拉曼频移与应变的标量关系。观察到了由激光能量引起的沿微悬臂梁轴线的频率漂移效应。
Material characterization at the micron-scale is of great importance in the design phase and for the estimation of the reliability of micro and nanoelectromechanical systems (MEMS/NEMS). We present a coupled technique for extracting material property information based on a defined force application on silicon beams in combination with a mapping of the resulting strains using an atomic force microscope integrated in a Raman spectroscope. Experimental data are compared to analytical predictions from the theory of elasticity. This technique will be useful, e.g., for the identification of stress concentrations in micro machined devices. The experiment is based on a bidirectional polarized micro-Raman diffraction in a backscattering configuration from a (001) silicon surface of a [001] parallel loaded micro-cantilever. A scalar-based relationship of the shift of the Raman frequency and strain is developed, taking into account the penetration depth of the laser into the silicon, as well as the drift of the optomechanical construction of the spectroscope. An effect of frequency shifts, induced by the laser energy, has been observed along the axis of the micro-cantilever.