Dissipation in Ultrahigh Quality Factor SiN Membrane Resonators
Dissipation in Ultrahigh Quality Factor SiN Membrane Resonators
复制标题
DOI：
10.1103/physrevlett.112.127201
复制
发表时间：
2014-03-24
影响因子：
8.6
通讯作者：
Vengalattore, M.
中科院分区：
文献类型：
--
作者：
Chakram, S.;Patil, Y. S.;Vengalattore, M.
我们通过光谱和干涉成像技术相结合的化学计量SiN谐振器的机械性能进行了研究。在室温下，我们证明了5 × 10（7）和1 × 10（14）Hz的f × Q积的质量因子。据我们所知，这些对应于介观弯曲谐振器报道的最大值。通过全面研究的限制耗散机制作为谐振器和基板的几何形状的函数，我们确定通过支撑基板的辐射损耗为主导的损失过程。除了通过优化的衬底设计指向更高的品质因数之外，我们的工作还实现了一个在宏观力学系统中观察和控制量子行为的支持平台。
We study the mechanical properties of stoichiometric SiN resonators through a combination of spectroscopic and interferometric imaging techniques. At room temperature, we demonstrate ultrahigh quality factors of 5 x 10(7) and a f x Q product of 1 x 10(14) Hz. To our knowledge, these correspond to the largest values yet reported for mesoscopic flexural resonators. Through a comprehensive study of the limiting dissipation mechanisms as a function of resonator and substrate geometry, we identify radiation loss through the supporting substrate as the dominant loss process. In addition to pointing the way towards higher quality factors through optimized substrate designs, our work realizes an enabling platform for the observation and control of quantum behavior in a macroscopic mechanical system.