Switched-Layer Design for SOI Bulk Micromachined XYZ Stage Using Stiction Bar for Interlayer Electrical Connection
Switched-Layer Design for SOI Bulk Micromachined XYZ Stage Using Stiction Bar for Interlayer Electrical Connection
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DOI：
10.1109/jmems.2009.2018371
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发表时间：
2009-08-01
影响因子：
2.7
通讯作者：
Toshiyoshi, Hiroshi
中科院分区：
文献类型：
--
作者：
Takahashi, Kazuhiro;Mita, Makoto;Toshiyoshi, Hiroshi
针对绝缘体上硅微机电系统（SOI-MEMS）的微机械加工，提出了一种简单的层间电互连新技术。SOI微结构的一部分被成形为细长的悬臂梁，并在牺牲释放后通过表面静摩擦力有意地接触到衬底表面。在有和没有后续的金属化工艺的情况下，静摩擦杆和衬底之间的接触电阻进行了研究。发现静摩擦杆在将电气部件（梳状驱动电极和互连系链）和机械部件（悬架和框架）分配到SOI和衬底层方面提高了MEMS设计的灵活性，并且在小的占地面积中制造高密度复杂的双层结构。作为高密度设计的一个例子，我们开发了一个微XYZ工作台与横向和垂直梳状驱动机构，并与传统的体微机械结构的设计进行了比较。
A simple and new technique for interlayer electrical interconnection for silicon-on-insulator microelectromechanical systems (SOI-MEMS) micromachining was developed without using additional device layers or patterning processes. A part of the SOI microstructure was shaped into a slender cantilever and intentionally brought into contact onto the substrate surface by surface stiction force after sacrificial release. The contact resistance between the stiction bar and the substrate was studied with and without a subsequent metallization process. The stiction bar was found to improve the MEMS design flexibility in allocating electrical components (comb-drive electrodes and interconnection tethers) and mechanical components (suspensions and frame) to the SOI and the substrate layer and to make a high-density complex double-deck structure in a small footprint. As an example of the high-density design, we developed a micro-XYZ stage with the lateral and vertical comb-drive mechanisms and compared the design with the conventional bulk micromachined structures.