A Multiband RF Antenna Duplexer on CMOS: Design and Performance
A Multiband RF Antenna Duplexer on CMOS: Design and Performance
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DOI：
10.1109/jssc.2013.2264626
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发表时间：
2013-09-01
影响因子：
5.4
通讯作者：
Abidi, Asad A.
中科院分区：
文献类型：
--
作者：
Mikhemar, Mohyee;Darabi, Hooman;Abidi, Asad A.
在3G/4G蜂窝收发器中，在CMOS IC上制作了一个RF收发器。该无源电路可在发射路径中维持较大的电压摆幅，并在3G/4G频段I、II、III、IV和IX的200 MHz带宽内将接收路径与发射器隔离45 dB以上。嵌入到该芯片中的低噪声放大器的级联噪声系数为5 dB，增益超过27 dB。在功率放大器和天线之间插入2.5 dB的损耗。
An RF duplexer has been fabricated on a CMOS IC for use in 3G/4G cellular transceivers. The passive circuit sustains large voltage swings in the transmit path, and isolates the receive path from the transmitter by more than 45 dB across a bandwidth of 200 MHz in 3G/4G bands I, II, III, IV, and IX. A low noise amplifier embedded into the duplexer demonstrates a cascade noise figure of 5 dB with more than 27 dB of gain. The duplexer inserts 2.5 dB of loss between power amplifier and antenna.