The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films
The effect of Cr doping on the microstructural and dielectric properties of (Ba0.6Sr0.4)TiO3 thin films
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DOI：
10.1016/j.tsf.2004.05.128
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发表时间：
2005-01
期刊：
影响因子：
2.1
通讯作者：
Kyoung-Tae Kim;Chang-I. Kim
中科院分区：
文献类型：
--
作者：
Kyoung-Tae Kim;Chang-I. Kim
采用醇盐溶胶-凝胶法在Pt/Ti/SiO{sub2}/Si衬底上制备了掺铬的Ba{sub0.6}Sr{sub0.4}TiO3}(BST)介电薄膜。原子力显微镜和X-射线衍射仪分析表明，随着铬掺杂率的增加，晶粒尺寸增大，而表面保持光滑无裂纹。研究还发现，与未掺杂薄膜相比，BST中铬含量的增加改善了薄膜的介电常数和漏电流特性。当掺铬摩尔分数为5时，优值系数达到最大值72.3。该材料的介电常数为426，损耗因子为0.0065，延伸率为47.7%，漏电流密度为5.31×10~(-8)A/cm~(-2)。结果表明，掺铬BST薄膜在可调谐器件中有很好的应用前景。
Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3} (BST) dielectric thin films doped by Cr were prepared using an alkoxide-based sol-gel method on the Pt/Ti/SiO{sub 2}/Si substrate. Atomic force microscopy and X-ray diffraction analysis showed that increasing the Cr-doping ratio causes increased grain size while the surface remains smooth and crack-free. It was also found that compared with undoped films the increase of Cr content in BST improves the dielectric constant and the leakage-current characteristics. The figure of merit reached the maximum value of 72.3 at the 5 mol% of Cr doping. This composition showed the dielectric constant of 426, the loss factor of 0.0065, tenability of 47.7%, and leakage-current density (at the electric field of 100 kV/cm) of 5.31x10{sup -8} A/cm{sup 2}. The results show that the Cr-doped BST thin films are prospective candidates for applications in tunable devices.