Displacement Damage Effects in Irradiated Semiconductor Devices
Displacement Damage Effects in Irradiated Semiconductor Devices
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DOI：
10.1109/tns.2013.2261316
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发表时间：
2013-06-01
影响因子：
1.8
通讯作者：
Palko, J. W.
中科院分区：
文献类型：
--
作者：
Srour, J. R.;Palko, J. W.
本文综述了半导体器件中辐射诱导的位移损伤效应，重点介绍了硅工艺。总结了位移损伤研究的历史，探讨了损伤产生的机理。讨论了缺陷团簇和孤立缺陷的性质。考虑了材料和器件中的位移损伤效应，包括硅粒子探测器、可见光成像阵列和太阳能电池中产生的效应。研究的其他主题包括Niel定标、载流子浓度变化、随机电报信号、辐射耐久性保证以及位移损伤的模拟方法。指出了需要进一步研究的领域。
A review of radiation-induced displacement damage effects in semiconductor devices is presented, with emphasis placed on silicon technology. The history of displacement damage studies is summarized, and damage production mechanisms are discussed. Properties of defect clusters and isolated defects are addressed. Displacement damage effects in materials and devices are considered, including effects produced in silicon particle detectors, visible imaging arrays, and solar cells. Additional topics examined include NIEL scaling, carrier concentration changes, random telegraph signals, radiation hardness assurance, and simulation methods for displacement damage. Areas needing further study are noted.