Density of states of amorphous GdxSi1-x at the metal-insulator transition
Density of states of amorphous GdxSi1-x at the metal-insulator transition
复制标题
非晶 GdxSi1-x 金属-绝缘体转变时的态密度
DOI：
--
复制
发表时间：
2000
影响因子：
8.6
通讯作者：
R. Dynes
中科院分区：
文献类型：
--
作者：
W. Teizer;F. Hellman;R. Dynes
通过测量低T（T约100 mK）下Gd-xSi（1-x）/氧化物/Pb隧道结的隧穿电导dI/dV，确定了非晶Gd-xSi（1-x），N（GdSi）（E）在金属-绝缘体转变附近的电子态密度。通过施加磁场，我们可以通过金属-绝缘体转变进行调谐，并同时测量单个样品上的输运和N（E）。我们发现一个平稳的过渡，从一个金属与强库仑相互作用的发展库仑间隙绝缘制度。在金属区域中，N（GdSi）（0）与σ（2）近似成比例。
We have determined the electronic density of states of amorphous Gd xSi (1-x), N(GdSi)(E), in the vicinity of the metal-insulator transition by measuring the tunneling conductance dI/dV across a Gd xSi (1-x)/oxide/Pb tunnel junction at low T (T approximately 100 mK). By applying a magnetic field we can tune through the metal-insulator transition and simultaneously measure the transport and N(E) on a single sample. We find a smooth transition from a metal with strong Coulomb interactions to a developing Coulomb gap in the insulating regime. In the metallic region N(GdSi)(0) scales approximately with sigma(2).