SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET
SJ-FINFET: A New Low Voltage Lateral Superjunction MOSFET
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DOI：
10.1109/ispsd.2008.4538910
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发表时间：
2008-05
期刊：
影响因子：
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通讯作者：
Y. Ōnishi;H. Wang;H. Xu;W. Ng;R. Wu;J. Sin
中科院分区：
文献类型：
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作者：
Y. Ōnishi;H. Wang;H. Xu;W. Ng;R. Wu;J. Sin
提出了一种新的SOI横向超结（SJ）功率晶体管结构SJ-FINFET，以满足低导通电阻率（罗恩，sp）的低压横向MOSFET的要求。SJ-FINFET由3D沟槽栅极和SJ漂移区（鳍）组成，以降低沟道电阻和漂移区电阻。模拟具有4 μ m的n/p漂移区柱厚度（SOI层厚度，Tepi）的SJ-FINFET，发现其罗恩，sp为0.18 mOmegaldrcm 2。这比击穿电压（BVdss）为68 V时众所周知的硅极限低21%。
This paper proposes a new SOI lateral superjunction (SJ) power transistor structure, SJ-FINFET, to address the requirement for low voltage lateral MOSFETs with low specific on-resistance (Ron,sp). The SJ-FINFET consists of a 3D trench gate and a SJ drift region (the fin) to reduce both the channel resistance and the drift region resistance. The SJ-FINFET with n/p-drift region pillar thickness (SOI layer thickness, Tepi) of 4 mum was simulated and found to have a Ron,sp of 0.18 mOmegaldrcm2. This is 21% lower than the well-known silicon limit at a breakdown voltage (BVdss) of 68 V.