Dinaphthotetrathiafulvalene Bisimides: A New Member of the Family of π-Extended TTF Stable p-Type Semiconductors
Dinaphthotetrathiafulvalene Bisimides: A New Member of the Family of π-Extended TTF Stable p-Type Semiconductors
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二萘四硫富瓦烯双酰亚胺：π-扩展 TTF 稳定 p 型半导体家族的新成员
DOI：
10.1002/chem.201702657
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Yamada Hiroko
中科院分区：
文献类型：
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作者：
Yamashita Masataka;Kawano Koki;Matsumoto Akinobu;Aratani Naoki;Hayashi Hironobu;Suzuki Mitsuharu;Zhang Lei;Briseno Alejandro L.;Yamada Hiroko
采用供电子TTF、π扩展萘和吸电子亚胺合成了一系列二萘四噻吩二亚胺（DNTTF - Im），制备了四噻吩二亚胺（TTF - Im）气稳型有机半导体。芳基取代的ddnttf - Imradical阳离子的电子自旋共振光谱和X射线单晶结构分析证实，自旋定位在给电子的TTF片段上。评估了使用高度结晶的正丁基（C4）和正己基（C6）取代的ddnttf - imt的有机场效应晶体管性能。在环境条件下，c6 - DNTTF - imm的空穴载流子迁移率从3.7×10−3cm2V−1s−1提高到0.30 cm2V−1s−1。这是由于在升华过程中衬底温度从25°C提高到200°C。XRD和显微分析表明，提高衬底温度加速了端部堆积，导致更大的晶粒适合于平行于衬底的空穴电荷输运。
Air‐stable organic semiconductors based on tetrathiafuluvalene (TTF) were developed by synthesising a series of dinaphthotetrathiafulvalene bisimides (DNTTF‐Im) using electron‐donating TTF, π‐extended naphthalene, and electron‐withdrawing imide. Electron‐spin‐resonance spectroscopy and X‐ray single‐crystal structure analysis of aryl‐substitutedDNTTF‐Imradical cations confirmed that localisation of the spin resides on the electron‐donating TTF moiety. The organic field‐effect transistor properties derived from the use of highly crystallinen‐butyl (C4) andn‐hexyl(C6)‐substitutedDNTTF‐Imwere assessed. The hole carrier mobility ofC6‐DNTTF‐Imwas improved from 3.7×10−3cm2V−1s−1to 0.30 cm2V−1s−1in ambient conditions. This is attributed to the raise of the substrate temperature from 25 °C to 200 °C during sublimation. The XRD and microscopy analysis suggested that increasing the substrate temperature accelerates the end‐on packing resulting in larger grains suitable for hole charge transport parallel to the substrate.