Tuning carbon nanotube band gaps with strain
Tuning carbon nanotube band gaps with strain
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DOI：
10.1103/physrevlett.90.156401
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发表时间：
2003-04-18
影响因子：
8.6
通讯作者：
McEuen, PL
中科院分区：
文献类型：
--
作者：
Minot, ED;Yaish, Y;McEuen, PL
我们发现，机械应变可以显著改变碳纳米管(NT)的能带结构。我们使用原子力显微镜尖端来同时改变NT应变，并对管进行静电选通。我们发现应变可以打开金属NT中的带隙，并改变半导体NT中的带隙。理论工作预测，每1%拉伸的带隙变化可以在+/-100 meV之间，这取决于NT手性，我们的测量结果与这个预测范围是一致的。
We show that the band structure of a carbon nanotube (NT) can be dramatically altered by mechanical strain. We employ an atomic force microscope tip to simultaneously vary the NT strain and to electrostatically gate the tube. We show that strain can open a band gap in a metallic NT and modify the band gap in a semiconducting NT. Theoretical work predicts that band gap changes can range between +/-100 meV per 1% stretch, depending on NT chirality, and our measurements are consistent with this predicted range.