Dopant enhanced neutralization of low-energy Li + scattered from Si(111)
Dopant enhanced neutralization of low-energy Li + scattered from Si(111)
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DOI：
10.1103/physrevb.85.165307
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发表时间：
2012-04
影响因子：
3.7
通讯作者：
R. Gann;Z. Šroubek;J. Yarmoff
中科院分区：
文献类型：
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作者：
R. Gann;Z. Šroubek;J. Yarmoff
测量了从Si(111)面上散射的3keV锂离子的中和度随掺杂浓度、掺杂类型和氢覆盖率的变化。当表面被氢饱和以解锁费米能级时，对于轻掺杂的样品，中性组分减少，但对于高掺杂的n型硅，中性组分变得异常大。一个包括多体带隙收窄效应的简单模型使用类似于通常用于离子/金属相互作用的自由电子气体凝胶模型的隧道机制，但排除了带隙中的能级，预测了中和的精度。政治行动委员会：73.20At，34.50.-S，34.70.+e，79.20Rf*通讯作者，电子邮件：ya moff@ucr.edu
The neutralization of 3 keV Li ions scattered from Si(111) is measured as a function of doping density, dopant type, and hydrogen coverage. When the surfaces are saturated with hydrogen to unpin the Fermi level, the neutral fractions decrease for lightly doped samples, but become anomalously large for highly doped n-type Si. A simple model that includes the manybody band-gap narrowing effect predicts the neutralization to good accuracy using a tunneling mechanism similar to the free-electron gas jellium model normally employed for ion/metal interactions, but excluding levels in the gap. PACS: 73.20.At, 34.50.-s, 34.70.+e, 79.20.Rf *Corresponding author, E-mail: yarmoff@ucr.edu