Diamond crystal growth by plasma chemical vapor deposition
Diamond crystal growth by plasma chemical vapor deposition
复制标题
通过等离子体化学气相沉积法生长金刚石晶体
DOI：
10.1063/1.339912
复制
发表时间：
1988
影响因子：
3.2
通讯作者：
J. Mucha
中科院分区：
文献类型：
--
作者：
C. P. Chang;D. Flamm;D. Ibbotson;J. Mucha
我们已经在一个简单的、高功率密度的、2450 MHz的放电管反应器中从CH 4/H2/O2气体进料中生长了金刚石晶体和多晶金刚石薄膜。单晶生长速率超过20 μm/h。使用拉曼光谱、俄歇光谱和X射线衍射分析了材料。成核的控制是生长健全膜的主要问题，并且目前生长所需的高温将限制应用。在我们所研究的进料组成范围内，氧气的加入对于存款金刚石是必要的。
We have grown diamond crystals and polycrystalline diamond films from CH4/H2/O2 gas feeds in a simple, high‐power density, 2450‐MHz discharge tube reactor. Single‐crystal growth rates over 20 μm/h have been achieved. The material has been analyzed using Raman spectroscopy, Auger spectroscopy, and x‐ray diffraction. Control of nucleation is a major problem for growing sound films, and the high temperatures currently required for growth will limit applications. Oxygen additions were necessary to deposit diamonds over the range of feed composition we studied.