Bismuth Aluminate : A New High-TC Lead-Free Piezo-/ferroelectric
Bismuth Aluminate : A New High-TC Lead-Free Piezo-/ferroelectric
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DOI:
10.1021/cm071830f
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发表时间:
2007-11
影响因子:
8.6
通讯作者:
J. Zylberberg;A. Belik;E. Takayama-Muromachi;Z. Ye
中科院分区:
文献类型:
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作者:
J. Zylberberg;A. Belik;E. Takayama-Muromachi;Z. Ye
Ferroelectric materials, which have a reversible spontaneous polarization and generate an electric potential when subjected to a mechanical stress (piezoelectricity), have applications in nonvolatile random access memory devices and micro-electromechanical systems. For such applications, materials that remain ferroelectric up to high temperatures are desired. Bismuth aluminate has been predicted to be one such material. We present herein the first characterization of the dielectric, ferroelectric, and piezoelectric properties of the ceramic BiAlO3 synthesized by the high-pressure method. It is demonstrated that BiAlO3 is indeed a lead-free ferroelectric with a Curie temperature TC > 520 °C, a piezoelectric coefficient d33 = 28 pC/N, and a room-temperature remnant polarization Pr = 9.5 μC/cm2. Pr increases with temperature, reaching 26.7 μC/cm2 at 225 °C.