Low pressure synthesis of bulk, polycrystalline gallium nitride
Low pressure synthesis of bulk, polycrystalline gallium nitride
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低压合成块状多晶氮化镓
DOI：
10.1063/1.118350
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发表时间：
1997
影响因子：
4
通讯作者：
K. Kash
中科院分区：
文献类型：
--
作者：
A. Argoitia;C. C. Hayman;J. Angus;Long Wang;J. Dyck;K. Kash
在没有衬底的情况下，通过原子氮与液态 Ga 的直接反应，在低压下生长多晶 GaN 厚膜。通过X射线衍射、透射电子显微镜、拉曼光谱和元素分析，证实该晶体为纤锌矿GaN。光致发光光谱在 298 和 10 K 处均显示出近带边峰和宽黄带发射。结果表明，原子氮是高压 N2 的有吸引力的替代品，可用于用氮饱和液态镓，从而合成块状 GaN。
Thick films of polycrystalline GaN were grown at low pressures by direct reaction of atomic nitrogen with liquid Ga without the presence of a substrate. The crystals were confirmed to be wurtzitic GaN by x-ray diffraction, transmission electron microscopy, Raman spectroscopy, and elemental analysis. Photoluminescence spectra showed near band edge peaks and broad yellow band emission at both 298 and 10 K. The results show that atomic nitrogen is an attractive alternative to high pressure N2 for the saturation of liquid gallium with nitrogen for the synthesis of bulk GaN.