High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface
High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface
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高性能生长和退火高带隙隧道结：界面处的 Te 行为
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
P. Colter
中科院分区：
文献类型：
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作者：
S. Bedair;Jeffrey L. Harmon;C. Carlin;I. Sayed;P. Colter
n ~+-InGaP（Te）/p ~+-AlGaAs（C）高带隙隧道结（TJ）的性能是实现多结光致发光高效率的关键。生长和退火的TJ的几个限制可以归因于InGaP的Te掺杂及其在结界面处的行为。InGaP中的Te原子倾向于附着在台阶边缘，导致Te记忆效应。在这项工作中，我们使用的峰值隧穿电流（Jpk）在这个TJ作为一个诊断工具来研究的行为的Te掺杂剂在TJ界面。此外，我们使用我们的理解Te的行为在界面上，设备建模的指导下，修改Te源关闭程序和生长速率。这些修改导致的记录性能的生长（2000 A/cm 2）和退火（1000 A/cm 2）的高带隙隧道结。
The performance of n+-InGaP(Te)/p+-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (Jpk) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm2) and annealed (1000 A/cm2) high band gap tunnel junction.