Stoichiometry behavior of TaN, TaCN and TaC thin films produced by magnetron sputtering
Stoichiometry behavior of TaN, TaCN and TaC thin films produced by magnetron sputtering
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DOI：
10.1016/j.apsusc.2013.03.028
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发表时间：
2013-08
影响因子：
6.7
通讯作者：
M. Vargas;H. Castillo;E. Restrepo‐Parra;W. Cruz
中科院分区：
文献类型：
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作者：
M. Vargas;H. Castillo;E. Restrepo‐Parra;W. Cruz
在磁控溅射系统中使用纯度为99.99%的Ta靶和硅衬底（111）合成薄膜。对于TaN、TaCN和TaC，用于膜生长的气体分别是（Ar+N2）、（Ar+CH4+N2）和（Ar+CH4）混合物。衬底温度从室温增加到500°C。利用X射线光电子能谱（XPS）研究了化合物的化学组成和成键构型，揭示了TaN、TaCN、TaC和CC键。此外，使用X射线衍射（XRD）分析晶体结构，表明存在属于面心立方结构的（111）和（200）面。分析了CH4和N2流量对涂层化学计量比的影响，研究了衬底温度对涂层化学计量比的影响。最后，使用扫描电子显微镜（SEM）来确定随衬底温度升高涂层中晶粒形成的演变。
Thin films were synthesized in a magnetron sputtering system using a target of Ta with 99.99% purity and silicon substrates (111). The gases used for the film growth were (Ar+N2), (Ar+CH4+N2) and (Ar+CH4) mixtures for TaN, TaCN and TaC, respectively. The substrate temperature increased from room temperature to 500°C. The chemical composition and bonding configuration were examined using X-ray photoelectron spectroscopy (XPS), revealing TaN, TaCN, TaC and CC bonds. Moreover, the crystallographic structure was analyzed using X-ray diffraction (XRD), indicating the presence of (111) and (200) planes belonging to a face-centered cubic structure. The stoichiometry variation dependence on the CH4and N2flow was analyzed, and the influence of the substrate temperature on the coatings was investigated. Finally, scanning electron microscopy (SEM) was used to determine the evolution on the grain formation in the coatings as the substrate temperature increased.