Development of the EM Field in a Shielding Enclosure with Aperture after Interference Caused by a Subnanosecond High-Power Parallelly Polarized EM Plane Wave Pulse
Development of the EM Field in a Shielding Enclosure with Aperture after Interference Caused by a Subnanosecond High-Power Parallelly Polarized EM Plane Wave Pulse
复制标题
亚纳秒高功率平行极化电磁平面波脉冲干扰后带孔屏蔽罩内电磁场的发展
DOI：
10.3390/en16020585
复制
发表时间：
2023
期刊：
影响因子：
3.2
通讯作者：
Kamil Bargieł
中科院分区：
文献类型：
--
作者：
M. Budnarowska;J. Mizeraczyk;Kamil Bargieł
由于高功率电磁（EM）脉冲攻击威胁的增加，对具有高屏蔽效能（SE）的金属外壳有很大的兴趣。这些封闭空间中必要的技术孔降低了它们的有效性。了解高功率电磁脉冲进入有孔外壳的穿透和内部传播是评估外壳EM SE的基础。本文给出了在平行极化的亚纳秒级高功率电磁平面波脉冲（脉宽0.3558 ns，电场和磁场幅值分别为106 V/m和2.6 × 103 A/m）干扰后，带孔屏蔽腔中电磁场发展的数值模拟结果。所获得的结果包括3D和2D图像，矢量地图的EM场内开发的外壳，和随时间变化的分布的电荷形成的外壳的内壁上。他们揭示了由亚纳秒高功率双极化电磁脉冲引起的外壳内电磁场的形成机制。在带孔封闭空间中形成的电磁场具有电磁场干涉结构的形式。它们是以几何（射线）光学描述的方式通过孔进入外壳的入射EM脉冲场、由孔边缘和外壳壁的内侧上形成的电荷产生的电场以及由孔边缘和外壳内壁上形成的表面电流产生的磁场的叠加。最强EM干扰结构的电场和磁场的幅度在t = 5 ns时非单调地减小到约0.7 × 105 V/m和200 A/m。我们发现，在封闭的点受到一长串的亚纳秒电磁脉冲，我们称之为内部电磁脉冲的干扰。这些内部脉冲的幅度低于入射EM脉冲的幅度。然而，由于它们的数量很大（30 ns内约有900个内部脉冲），它们可能在外壳内造成严重的电磁危害。这意味着当用带孔的封闭体作屏蔽时，亚纳秒脉冲引起的电磁扰动的性质发生了根本的变化。
Due to the increase in the threat of attacks with high-power electromagnetic (EM) pulses, there is great interest in metallic enclosures with high shielding effectiveness (SE). Necessary technological apertures in these enclosures reduce their effectiveness. Understanding the penetration and internal propagation of the high-power EM pulses into an apertured enclosure is fundamental to assessing the EM SE of the enclosure. In the present paper, results of the numerical simulations of development of the EM field in a shielding enclosure with aperture after the interference of a subnanosecond high-power EM plane wave pulse of the parallel polarization (having the duration of 0.3558 ns and the amplitudes of the electric and magnetic fields of 106 V/m and 2.6 × 103 A/m, respectively) are presented. The results obtained include 3D and 2D images , vector maps of the EM field developed inside the enclosure, and time-varying distributions of the electric charges formed on the inner walls of the enclosure. They revealed the mechanism of formation of the EM field inside the enclosure caused by the subnanosecond high-power parallelly polarized EM pulse. The EM field formed in the enclosure with aperture has the form of the electric and magnetic field interference structures. They are a superposition of the incident EM pulse field, which entered the enclosure through the aperture in the way described by the geometrical (ray) optics, the electric field generated by the electric charges formed on the aperture edges and inner sides of the walls of the enclosure, and the magnetic field generated by the surface current formed on the aperture edges and on the inner walls of the enclosure. The amplitudes of the electric and magnetic fields of the strongest EM interference structures decrease non-monotonically to about 0.7 × 105 V/m and 200 A/m at t = 5 ns. We found that the points in the enclosure are subjected to the disturbance of a long series of subnanosecond EM pulses, which we have called internal EM pulses. The amplitudes of these internal pulses are lower than those of the incident EM pulse. Nevertheless, they can pose a severe EM hazard inside the enclosure due to their large number (about 900 internal pulses in 30 ns). This means a fundamental change in the character of the EM disturbance caused by the subnanosecond pulse when the enclosure with aperture is used as a shield.