A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure
A Self-Rectifying Resistive Switching Device Based on HfO2/TaOx Bilayer Structure
复制标题
基于HfO2/TaOx双层结构的自整流阻变器件
DOI：
10.1109/ted.2018.2883192
复制
发表时间：
2019-02-01
影响因子：
3.1
通讯作者：
Liu, Ming
中科院分区：
文献类型：
--
作者：
Ma, Haili;Zhang, Xumeng;Liu, Ming
为了有效解决高密度交叉阵列（CBA）中的串扰问题，需要在电阻式随机存取存储器（ReRAM）器件中引入高整流特性，深入了解影响ReRAM器件整流特性的因素对ReRAM的大规模应用至关重要。在本文中，一个高性能的自整流器件与CMOS兼容的Pd/HfO 2/TaOx/Ta结构，在1-kb的CBA的表现。成功地实现了无成形、自适应和高均匀性的特性。通过调节HfO 2整流层的厚度，在低阻态（LRS）下，在+/-3 V电压下，器件的整流比可以达到2 × 10（3）。还通过实验证实，在高达32 X 32个单元的阵列中，当处于高电阻状态（逻辑上“OFF”状态）的所选单位单元被RLRS（逻辑上“ON”状态）单元包围时，其是稳定可读的。此外，提出了一种基于界面势垒调制和缺陷捕获/去捕获的模型，阐明了介质厚度对器件自整流特性的影响。本文提出的结果提供了一个巨大的潜力，无选择器的高密度存储器的应用。
To effectively solve the crosstalk issue in high-density crossbar array (CBA), high rectifying characteristics should be introduced in the resistance random-access memory (ReRAM) device, and in-depth understanding of the affecting factors on rectifying properties is essential for the large-scale application of ReRAM. In this paper, a high-performance self-rectifying device with CMOS compatible Pd/HfO2/TaOx/Ta structure was demonstrated in a 1-kb CBA. Forming-free, self-compliance, and high uniformity characteristics were successfully achieved. By modulating the thickness of the HfO2 rectifying layer, the rectifying ratio of device could be achieved as high as similar to 2 x 10(3) under +/- 3 V at low-resistance state (LRS). It was also experimentally confirmed that the selected unit cell in high-resistance state (logically the "OFF" state) was stably readable when it was surrounded by unselected LRS (logically the "ON" state) cells, in an array of up to 32 x 32 cells. Furthermore, a model based on interfacial barrier modulation and defects trapping/detrapping was proposed to elucidate the impact of the dielectric thickness on the self-rectifying characteristics of the device. The results presented in this paper provide a great potential for selector-free high-density memory applications.