High voltage and high current density vertical GaN power diodes
High voltage and high current density vertical GaN power diodes
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DOI：
10.1049/el.2016.1156
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发表时间：
2016-06-23
影响因子：
1.1
通讯作者：
Dickerson, J. R.
中科院分区：
文献类型：
--
作者：
Armstrong, A. M.;Allerman, A. A.;Dickerson, J. R.
GaN高压垂直p-n二极管的实现工作在>3.9 kV击穿电压下，比导通电阻为1.4 kA/cm（2）。从正向和反向电流-电压特性的分析中估计器件的有效临界电场为3.9 MV/cm。这表明GaN临界电场的基本极限明显大于先前认为的。
The realisation of a GaN high voltage vertical p-n diode operating at >3.9 kV breakdown with a specific on-resistance 1.4 kA/cm(2). An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current-voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.