Tuning the photoluminescence of graphene oxide quantum dots by photochemical fluorination
Tuning the photoluminescence of graphene oxide quantum dots by photochemical fluorination
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通过光化学氟化调节氧化石墨烯量子点的光致发光
DOI：
10.1016/j.carbon.2018.09.068
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发表时间：
2019-01-01
期刊：
影响因子：
10.9
通讯作者：
Li, Ming
中科院分区：
文献类型：
--
作者：
Gao, Fuhua;Liu, Fuchi;Li, Ming
调整石墨烯量子点的带隙并理解其内在机制对于拓展石墨烯量子点在光电子领域的应用具有重要意义。本论文采用光化学方法合成了氟化氧化石墨烯量子点，并对其光学性质进行了研究。所获得的F-GOQD表现出最大的光致发光（PL）发射蓝移约。77 nm，与氧化石墨烯量子点（GOQD）相比。荧光位移的产生是由于在荧光过程中羟基和羰基被氟取代，这可以调节GOQD的带隙。密度泛函理论（DFT）的计算支持我们提出的机制，通过使用带隙调谐的GOQD。(C)2018爱思唯尔有限公司版权所有
Tailoring the band gap and understanding the underlying mechanism are important for extending the applications of graphene quantum dots in optoelectronics. In this work, we synthesize fluorinated graphene oxide quantum dots (F-GOQDs) through a photochemical method, and study their optical properties. The obtained F-GOQDs exhibit a maximal blue-shift of photoluminescence (PL) emission of ca. 77 nm compared to that of the graphene oxide quantum dots (GOQDs). The PL shift results from the substitution of the hydroxyls and carbonyls groups with fluorine during the fluorination process, which can tune the band gap of the GOQDs. Density functional theory (DFT) calculations support our proposed mechanism for band gap tuning in the GOQDs through the use of fluorination. (C) 2018 Elsevier Ltd. All rights reserved.