MBE growth and properties of InN-based dilute magnetic semiconductors
MBE growth and properties of InN-based dilute magnetic semiconductors
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DOI:
10.1016/j.jcrysgro.2004.05.073
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发表时间:
2004-08
影响因子:
1.8
通讯作者:
Pingping Chen;H. Makino;T. Yao
中科院分区:
文献类型:
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作者:
Pingping Chen;H. Makino;T. Yao