Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots
Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots
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DOI：
10.1063/1.3464324
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发表时间：
2010-07
影响因子：
4
通讯作者：
M. Xiao;M. House;HongWen Jiang
中科院分区：
文献类型：
--
作者：
M. Xiao;M. House;HongWen Jiang
我们报告了基于硅金属半导体的量子点（QD）的少电子极限中的自旋填充模式。库仑振荡峰的磁场依赖性表明最后几个电子填充了平行自旋。这意味着与轨道能级间距相比，存在较大的自旋交换能，这对于相对较大的硅量子点来说是预测的。我们的激发态光谱研究证实了大的自旋交换能，以及零磁场下的大谷分裂。
We report the spin filling pattern in the few electron limit of silicon metal-on-semiconductor based quantum dots (QDs). Magnetic field dependence of Coulomb oscillation peaks showed filling of parallel spins for the last few electrons. This implies the existence of a large spin exchange energy compared with the orbital level spacing, which has been predicted for relatively large silicon QDs. Our excited-state spectroscopy study confirmed a large spin exchange energy, as well as a large valley splitting at zero magnetic field.