Investigation of Phonon DeformationPotentials in Si_<1_x>Ge_x by Oil-ImmersionRaman Spectroscopy
Investigation of Phonon DeformationPotentials in Si_<1_x>Ge_x by Oil-ImmersionRaman Spectroscopy
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油浸拉曼光谱研究Si_<1_x>Ge_x的声子变形势
DOI：
10.1143/apex.5.111301
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
and A. Ogura
中科院分区：
文献类型：
--
作者：
D. Kosemura;K. Usuda;and A. Ogura
用油浸拉曼光谱研究了Si1-xGex中的声子形变势。应变Si1-xGex和应变Si分别激发了横向光学(TO)和纵向光学(LO)声子模。利用TO和LO的拉曼波数位移求出了PDP p和Q。对得到的Si、SiGe 0.153和SiGe 0.297的PDP进行了比较。此外，还得到了应变位移系数，并与以前报道的值进行了比较。P和q值使我们可以用油浸拉曼光谱精确地评价Si和Si1-xGex中的各向异性双轴应力状态。
Phonon deformation potentials (PDPs) in Si 1-x Ge x were investigated by oil-immersion Raman spectroscopy. Transverse optical (TO) and longitudinal optical (LO) phonon modes were separately excited for strained Si 1-x Ge x as well as strained Si. PDPs p and q were derived with the use of the Raman wavenumber shifts of TO and LO. The obtained PDPs for Si, SiGe 0.153, and SiGe 0.297 were compared with one another. Furthermore, the strain-shift coefficient was also obtained and compared with the previously reported values. The p and q values allow us to precisely evaluate anisotropic biaxial stress states in Si and Si 1-x Ge x by oil-immersion Raman spectroscopy.