A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers
A Versatile and Simple Approach to Generate Light Emission in Semiconductors Mediated by Electric Double Layers
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DOI：
10.1002/adma.201606918
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发表时间：
2017-04
影响因子：
29.4
通讯作者：
J. Pu;T. Fujimoto;Yuki Ohasi;S. Kimura;Chang-Hsiao Chen;Lain‐Jong Li;T. Sakanoue;T. Takenobu
中科院分区：
文献类型：
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作者：
J. Pu;T. Fujimoto;Yuki Ohasi;S. Kimura;Chang-Hsiao Chen;Lain‐Jong Li;T. Sakanoue;T. Takenobu
发光器件是当前光源的主要器件。原则上，传统的发光器件需要异质结构和/或有意的载流子掺杂来形成p-n结。然而，对于大多数新兴的半导体来说，这种结的形成是非常困难的，而发光器件的制造总是一个巨大的挑战。这项研究提出了一种通用而简单的方法来实现发光器件。这种建议的装置只需要一个半导体薄膜，两个电极上覆盖着电解液。这种独特的结构实现了在略大于材料带隙能量的电压下发光。本研究将这一概念应用于新兴的直接带隙半导体，如过渡金属二卤化物单分子膜和氧化锌单晶。这些器件产生了明显的发光，并为动态p-i-n结或隧道结的形成提供了充分的证据，为开发光电子器件提供了一种通用的技术。
The light‐emitting device is the primary device for current light sources. In principle, conventional light‐emitting devices need heterostructures and/or intentional carrier doping to form a p–n junction. This junction formation is, however, very difficult to achieve for most emerging semiconductors, and the fabrication of light‐emitting devices is invariably a significant challenge. This study proposes a versatile and simple approach to realize light‐emitting devices. This proposed device requires only a semiconducting film with two electrodes that are covered with an electrolyte. This unique structure achieves light emission at a voltage slightly larger than the bandgap energy of materials. This study applies this concept to emerging direct bandgap semiconductors, such as transition metal dichalcogenide monolayers and zinc oxide single crystals. These devices generate obvious light emission and provide sufficient evidence of the formation of a dynamic p–i–n junction or tunneling junction, presenting a versatile technique to develop optoelectronic devices.