Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
Circular photogalvanic effect in HgTe/CdHgTe quantum well structures
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DOI：
10.1088/0268-1242/25/9/095005
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发表时间：
2010-02
影响因子：
1.9
通讯作者：
B. Wittmann;S. Danilov;V. Bel'kov;S. Tarasenko;E. Novik;H. Buhmann;C. Brüne;L. Molenkamp;Z. Kvon;N. Mikhailov;S. Dvoretsky;N. Q. Vinh;A. V. D. van der Meer;B. Murdin;S. Ganichev
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文献类型：
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作者：
B. Wittmann;S. Danilov;V. Bel'kov;S. Tarasenko;E. Novik;H. Buhmann;C. Brüne;L. Molenkamp;Z. Kvon;N. Mikhailov;S. Dvoretsky;N. Q. Vinh;A. V. D. van der Meer;B. Murdin;S. Ganichev
本文描述了在HgTe/CdHgTe量子威尔斯阱中观察到的圆形和线性光电流效应。量子阱结构中的中红外辐射的带间吸收以及太赫兹辐射的子带内吸收被证明是由于这些效应而引起的直流电流。光电流的大小和方向随衬底的辐射偏振态和晶体学取向以可以从唯象理论理解的简单方式变化。所观察到的光电流对辐射波长和温度的依赖关系进行了讨论的微观模型。
We describe the observation of the circular and linear photogalvanic effects in HgTe/CdHgTe quantum wells. The interband absorption of mid-infrared radiation as well as the intrasubband absorption of terahertz radiation in the quantun well structures is shown to cause a dc electric current due to these effects. The photocurrent magnitude and direction varies with the radiation polarization state and crystallographic orientation of the substrate in a simple way that can be understood from a phenomenological theory. The observed dependences of the photocurrent on the radiation wavelength and temperature are discussed in terms of a microscopic model.