Planar organic spin valves using nanostructured Ni80Fe20 magnetic contacts
Planar organic spin valves using nanostructured Ni80Fe20 magnetic contacts
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DOI：
10.1016/j.orgel.2013.11.009
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发表时间：
2014
影响因子：
3.2
通讯作者：
H. AlQahtani;M. Bryan;T. Hayward;M. P. Hodges;M. Im;P. Fischer;M. Grell;D. Allwood
中科院分区：
文献类型：
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作者：
H. AlQahtani;M. Bryan;T. Hayward;M. P. Hodges;M. Im;P. Fischer;M. Grell;D. Allwood
将有机半导体PTCDI-C13蒸发到间隔为120 nm的图案化Ni 80 Fe 20磁性纳米线上，制备了平面有机自旋阀。通过在其中一根线的末端包括畴壁“成核垫”以确保磁切换场中的大分离，来实现对纳米线中磁化强度的相对对准的控制。开关行为进行了研究，通过光学和X射线磁成像。室温下的有机磁电阻为-0.35%，这比类似材料的垂直自旋阀所达到的磁电阻要大。我们将平面几何形状的增强性能归因于半导体在金属顶部的沉积，这与垂直自旋阀中的金属-半导体界面相比提高了金属-半导体界面的质量。
Planar organic spin valves were fabricated by evaporating organic semiconductor PTCDI-C13onto pairs of patterned Ni80Fe20magnetic nanowires separated by 120 nm. Control over the relative alignment of magnetisation in the nanowires was achieved by including a domain wall ‘nucleation pad’ at the end of one of the wires to ensure a large separation in magnetic switching fields. Switching behaviour was investigated by optical and X-ray magnetic imaging. Room temperature organic magnetoresistance of −0.35% was observed, which is large compared to that achieved in vertical spin valves with similar materials. We attribute the enhanced performance of the planar geometry to the deposition of the semiconductor on top of the metal, which improves the quality of metal–semiconductor interfaces compared to the metal-on-semiconductor interfaces in vertical spin valves.