Heteroepitaxy of Doped and Undoped Cubic Group III‐Nitrides
Heteroepitaxy of Doped and Undoped Cubic Group III‐Nitrides
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掺杂和未掺杂立方III族氮化物的异质外延
DOI：
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发表时间：
1999
期刊：
影响因子：
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通讯作者：
K. Lischka
中科院分区：
文献类型：
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作者：
D. As;K. Lischka
立方族iii -氮化物（GaN, InN， AlN及其合金）具有比其热力学稳定的六方对应物更高的晶体对称性。它们有望提供一些技术进步，如易于切割激光切面，更容易掺杂和接触。然而，它们的亚稳晶体结构是晶体生长的一个严重挑战。本文综述了近年来c- iii -氮化物的外延和一些物理性质的评价方面的进展。大多数研究都集中在c-GaN上，这种材料是所有c- iii氮化物中最先进的化合物，这一事实指导了我们。讨论了c-GaN的结构、光学和电学性质，以及含有适量In和Al的InGaN和AlGaN的结构、光学和电学性质，并考虑到未来可能的光电器件应用。
Cubic group III-nitrides (GaN, InN, AlN and their alloys) have a higher crystal symmetry than their thermodynamic stable hexagonal counterparts. They are expected to offer some technological advances such as easy cleaving of laser facets, easier doping and contacting. However, their metastable crystal configuration is a serious challange for crystal growth. We review recent progress made with the epitaxy and the evaluation of a number of physical properties of c-III-nitrides. We are guided by the fact that most research has been concentrated on c-GaN and that this material is the most advanced compound of all c-III-nitrides. The structural, optical and electrical properties of c-GaN as well as that of InGaN and AlGaN containing modest amounts of In and Al are discussed with regard to possible future optoelectronic device applications.