Electropolymerization of poly vinylene films onto and inside porous Si layers of different types and morphologies
Electropolymerization of poly vinylene films onto and inside porous Si layers of different types and morphologies
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不同类型和形态的多孔硅层上和内部的聚乙烯薄膜电聚合
DOI：
10.1149/1.3497359
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
and N. Koshida
中科院分区：
文献类型：
--
作者：
B. Gelloz;M. Mentek;T. Djenizian;F. Dumur;L. Jin;and N. Koshida
以乙腈为溶剂，二甲苯-二(三苯基氯化膦)为前驱体，研究了聚对苯乙撑(PPV)在多孔硅(PSI)孔中的电化学沉积。成功地在不同的硅衬底和PSI层上沉积了PPV。它还沉积在P型和P型PSI中。沉积时的PPV具有很强的发光特性。通过光学(光致发光、反射率)和结构(傅立叶变换红外、扫描电子显微镜)分析证实了沉积的存在。沉积后的PPV表面光滑，无剥落现象。对于强发光型PSI，由于PSI的高电阻率，沉积速度受到了限制。通过前驱体在孔道中的扩散和载流子在PSI中的传输，发现PSI纳米结构对沉积的影响很大。
The electrochemical deposition of poly (para-phenylene) vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and-xylylene--bis (triphenylphosphonium chloride) as precursor. PPV was successfully deposited onto various Si substrates and PSi layers. It was also deposited inside-and p-type PSi. The as-deposited PPV is strongly luminescent. The deposition was confirmed by optical (photoluminescence, reflectivity) and structural (Fourier-transform infrared, scanning electron microscopy) analysis. The deposited PPV was smooth without peeling on PSi layers. With strongly luminescent-type PSi, the rate of the deposition was limited by the large resistivity of PSi. The deposition was found dramatically affected by the PSi nanostructure through the diffusion of precursors in the pores and charge carrier transport in PSi.