A transition between NRD guide and microstrip line at 60 GHz
A transition between NRD guide and microstrip line at 60 GHz
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60 GHz 下 NRD 波导和微带线之间的过渡
DOI：
10.1093/ietele/e88-c.10.1968
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
T. Yoneyama
中科院分区：
文献类型：
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作者：
F. Kuroki;M. Kimura;T. Yoneyama
在60 GHz频段开发了适用于构建高性能毫米波集成电路的NRD波导和用于安装HEMT、HET和MMIC等半导体器件的B微带线之间的过渡。重点讨论了NRD波导与微带线之间的场匹配方式。我们提出了一种新的过渡结构，利用垂直带状线和同轴线连接微带线，垂直带状线易于与NRD波导耦合。此外，我们设计了一种新的微带线封装结构，以防止NRD波导与微带线之间的泄漏。在60.5 GHz的中心频率下，在3ghz的带宽范围内，所制备的过渡层的插入损耗小于0.5 dB。该过渡应用于60 GHz NRD波导中的MMIC放大器集成。在60 GHz时，正增益和反向增益分别为15 dB和-20 dB。
A transition between an NRD guide, suitable for construction of high performance millimeter-wave integrated circuits, and B microstrip line, being used to mount semiconductor devices such as HEMT, HET, and MMIC, was developed at 60 GHz. Main emphasis was placed on a manner of field matching behveen the NRD guide and microstrip line. We proposed a new transition structure using a vertical strip line, having easy coupling performance to the NRD guide, and a coaxial line, being used to connect with the microstrip line. Moreover, we devised a new packaging structure of the microstrip line to prevent undesired leakage between the NRD guide and microstrip line. The insertion loss of the fabricated transition was measured to be less than 0.5 dB in the bandwidth of3 GHz at a center frequency of 60.5 GHz. The transition was applied to MMIC amplifier integration in the NRD guide at 60 GHz. The forward and reverse gains were measured to be 15 dB and -20 dB, respectively, at 60 GHz.