Development of cryogenic load-pull analysis: power amplifier technology performance trends
Development of cryogenic load-pull analysis: power amplifier technology performance trends
复制标题
低温负载牵引分析的发展:功率放大器技术性能趋势
DOI:
10.1109/mwsym.1998.700698
复制
发表时间:
1998
期刊:
影响因子:
--
通讯作者:
T. Kikel
中科院分区:
文献类型:
--
作者:
E. Gebara;J. Laskar;M. Harris;T. Kikel
On-wafer load-pull measurements at cryogenic temperatures are made for the first time on FET power amplifier structures to demonstrate the improved performance when operated at reduced temperatures. Measurements from 300 K to 17 K demonstrate improvements in both efficiency (40-80%) and output power (1.0-2.7 dB). These results demonstrate that advanced device technologies that are optimized for cooled operation may provide significantly enhanced system performance and reliability with a minimal increase in prime power.