Development of cryogenic load-pull analysis: power amplifier technology performance trends

Development of cryogenic load-pull analysis: power amplifier technology performance trends
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低温负载牵引分析的发展:功率放大器技术性能趋势

DOI:
10.1109/mwsym.1998.700698
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发表时间:
1998
期刊:
1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192)
影响因子:
--
通讯作者:
T. Kikel
T. Kikel
中科院分区:
--
文献类型:
--
作者:
E. Gebara;J. Laskar;M. Harris;T. Kikel

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首次在FET功率放大器结构上进行了低温下的片上负载拉动测量,以证明在较低温度下工作时性能的改善。从300K到17K的测量表明,在效率(40%-80%)和输出功率(1.0-2.7dB)方面都有改善。这些结果表明,针对冷却操作进行优化的先进设备技术可以在最小限度增加原始功率的情况下提供显著增强的系统性能和可靠性。
On-wafer load-pull measurements at cryogenic temperatures are made for the first time on FET power amplifier structures to demonstrate the improved performance when operated at reduced temperatures. Measurements from 300 K to 17 K demonstrate improvements in both efficiency (40-80%) and output power (1.0-2.7 dB). These results demonstrate that advanced device technologies that are optimized for cooled operation may provide significantly enhanced system performance and reliability with a minimal increase in prime power.